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MBR730 – MBR750
Document number: DS23007 Rev. 10 - 2
2 of 4
www.diodes.com
May 2013
? Diodes Incorporated
MBR730 –
MBR750
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
730
MBR
740
MBR
750
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
40
50
V
RMS Reverse Voltage
VR(RMS)
21
28
35
V
Average Rectified Output Current
(Note 4) @ TC
= +125°C
IO
7.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 4)
RθJC
3.5
°C/W
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/μs
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
MBR
730
MBR
740
MBR
750
Unit
Forward Voltage Drop @ IF
= 7.5A, T
J
= +25°C
(Note 6) @ IF
= 7.5A, T
J
= +125°C
@ I
F
= 15A, T
J
= +25°C
@ I
F
= 15A, T
J
= +125°C
VFM
—
0.57
0.84
0.72
0.75
0.65
—
—
V
Peak Reverse Current @ TJ
= +25°C
at Rated DC Blocking Voltage @ TJ
= +125°C
IRM
0.1
15
0.5
50
mA
Typical Total Capacitance (Note 5)
CT
400
pF
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and app
lied reverse voltage of 4.0V DC.
6. Short duration pulse test used to minimize self-heating effect.
050100150
I, AVE
R
A
G
E
F
WD
C
U
R
R
EN
T
(A)
(AV)
T , CASE TEMPERATURE ( C)C
°
Fig. 1 Fwd Current Derating Curve
0
2
4
6
8
10
0.1
1.0
10
100
0.1 0.40.2
0.3
0.5
0.6 0.80.7
0.9
1.0
I, INS
T
AN
T
ANE
O
U
S
F
WD
C
U
R
R
EN
T
(A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)F
Fig. 2 Typ Instantaneous Fwd Characteristics
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